LK2960 Insulated gate bipolar transistor IGBT Toshiba MG200J2YS45 DFS60E-S1EA01024 The RJ155 board Ferag 526

The RJ155 board Ferag 526

High reliability: Developed in order to function stable in demanding industrial environments

This used assembly comes from a disassembly of industrial machines and was in operation until its expansion

1 - A proven model that was successfully used in numerous applications

PQ2308 Müller Martini 4475

LK2960 Insulated gate bipolar transistor IGBT Toshiba MG200J2YS45 DFS60E-S1EA01024 The RJ155 board Ferag 526The LK2960 Insulated Gate Bipolar Transistor (IGBT) from Toshiba, Model MG200J2YS45, is an excellent choice for industrial applications that require reliable performance and efficiency. This IGBT used comes from a device dismantling and was in operation until it was expanded, which underlines its quality and functionality. High performance: Designed for high electricity and voltage applications, this IGBT offers optimal performance parameters.